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Amitabh Joshi Anuranjan Anand Balasubramanian Sundaram C. P. Rajendran C.N.R Rao 
C.N.R Rao Chandrabhas Narayana Diwakar S. Venkatesan Eswaramoorthy MG.U. Kulkarni 
Ganesh Subramanian Govindaraju T H Ila Hemalatha Balaram James P. Clement Chelliah 
Jayanta Haldar K. B. Sinha K.S. Narayan Kanishka Biswas Kaustuv Sanyal 
Kavita Jain Krishnan V.Kundu Tapas K.M. R. S. Rao Maneesha Inamdar 
Meheboob Alam Meher K. Prakash Namita Surolia Narasimha Roddam Premkumar Senguttuvan 
Premkumar Senguttuvan Rajesh Ganapathy Ranjan Datta Ranjani Viswanatha Ravi Manjithaya 
S. N. Bhat Santosh Ansumali Santosh Ansumali Sarit S. Agasti Sebastian C Peter 
Sheeba Vasu Shivaprasad S. M.Shobhana Narasimhan Sreenivas K. R.Sridhar Rajaram 
Srikanth Sastry Subi Jacob George Subir K. Das Sundaresan A.Swapan Pati 
Tapas Kumar Maji Udaykumar Ranga Umesh V. Waghmare Valdiya K. S.Vidhyadhiraja N. S.
Vidya T. N. C. 

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  1. kumar,P, Kuyyalli, J, Kumar, M and Shivaprasad, S. M, A superstructural 2D-phase diagram for Ga on the Si(111)-7x7 system, Sol. State Commun. 151, 1758 - 1760 (2011).

  2. Kesaria, M and Shivaprasad, S. M, Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001), Appl. Phys. Lett. 99, 143105 - 143109 (2011).

  3. Kesaria, M, Shetty, S and Shivaprasad, S. M, Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on bare C-Plane Sapphire, Crystal Growth & Design 11, 4900 - 4904 (2011).

  4. Kesaria, M, Shetty, S and Shivaprasad, S. M, Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire, Materials Research Bulletin 46, 1811 - 1814 (2011).

  5. Praveen Kumar, M. Kumar, B. R. Mehta and S. M. Shivaprasad, Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature, Surface Science 605, 1426 - 1430 (2011).

  6. Jithesh K, Malleswararao tangi and S. M. Shivaprasad, Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001), J. Appl. Physics 109, 093513 - 093517 (2011).

  7. Praveen Kumar, M. Kumar, Govind, B. R. Mehta and S. M. Shivaprasad, Adsorption kinetics of low-dimensional Ga structures on Si(5 5 12)-2x1 trenched  templates, International Journal of Nanoscience 1-2, 117 - 120 (2011).

  8. M. Kesaria, S. Shetty and S. M. Shivaprasad, Spontaneous formation of GaN nanostructures by molecular beam epitaxy, Journal of Crystal Growth 326, 191 - 194 (2011).

  9. Konstantin N. Galkin, M. Kumar, S.M. Shivaprasad and Nikolay G. Galkin, The model of the magnesium silicide phase (2/3√3×2/3√3)-R30° on Si(111), Physics Procedia 11, 47 - 50 (2011).

  10. Konstantin N. Galkin, M. Kumar, S.M. Shivaprasad and Nikolay G. Galkin, AES and EELS study of desorption of magnesium silicide films on Si(111), Physics Procedia 11, 51 - 53 (2011).

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