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Amitabh Joshi Anuranjan Anand Balasubramanian Sundaram Bani Kanta Sarma Bivas Saha 
C. P. Rajendran C.N.R Rao C.N.R Rao Chandrabhas Narayana Diwakar S. Venkatesan 
Eswaramoorthy MG.U. Kulkarni Ganesh Subramanian Govindaraju T H Ila 
Hemalatha Balaram James P. Clement Chelliah Jayanta Haldar K. B. Sinha K.S. Narayan 
Kanishka Biswas Kaustuv Sanyal Kavita Jain Krishnan V.Kundu Tapas K.
Kushagra Bansal M. R. S. Rao Maneesha Inamdar Meheboob Alam Meher K. Prakash 
Namita Surolia Narasimha Roddam Premkumar Senguttuvan Rajesh Ganapathy Ranjan Datta 
Ranjani Viswanatha Ravi Manjithaya S. N. Bhat Santosh Ansumali Santosh Ansumali 
Sarit S. Agasti Sebastian C Peter Sheeba Vasu Shivaprasad S. M.Shobhana Narasimhan 
Sreenivas K. R.Sridhar Rajaram Srikanth Sastry Subi Jacob George Subir K. Das 
Sundaresan A.Swapan Pati Tapas Kumar Maji Udaykumar Ranga Umesh V. Waghmare 
Valdiya K. S.Vidhyadhiraja N. S.Vidya T. N. C. 

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  1. Kanishka Biswas, J. He, I. D. Blum, W. Chun-I, T. P. Hogan, D. N. Seidman, V. P. Dravid and M. G. Kanatzidis, High-performance bulk thermoelectrics with all-scale hierarchical architectures, Nature 489, 414 - 418 (2012).

  2. Shih-Han Lo, Jiaqing He, Kanishka Biswas, Mercouri G. Kanatzidis and Vinayak P. Dravid, Phonon Scattering and Thermal Conductivity in p-Type Nanostructured PbTe-BaTe Bulk Thermoelectric Materials, Adv. Funct. Mater 22, 5175 - 5184 (2012).

  3. Michihiro Ohta, Kanishka Biswas, Shih-Han Lo, Jiaqing He, Duck Young Chung, Vinayak P. Dravid and Mercouri G. Kanatzidis, Enhancement of thermoelectric figure of merit by the insertion of MgTe nanostructures in p-type PbTe doped with Na2Te, Adv. Energy Mater. 2, 1117 - 1123 (2012).

  4. Ivan D. Blum, DIieter Ishem, David N. Seidman, Jiaqing He, John Androulakis, Kanishka Biswas, Vinayak P. Dravid and Mercouri G. Kanatzidis, Dopant Distributions in PbTe-Based Thermoelectric Materials, J. Electronic Mater. 41, 1583 - 1588 (2012).

  5. Kanishka Biswas, Li-Dong Zhao and Mercouri G. Kanatzidis, Tellurium free thermoelectrics: the anisotropic n-type semiconductor Bi2S3, Adv. Energy Mater. 2, 634 - 638 (2012).

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