Proposed symmetry dependent renormalization of phonons to explain the observed Raman spectra of MoS2 as a function of doping, useful in characterization of field effect transistors based on MoS2.
Determination of the structure of point and line defects in graphene and 2-dimensional BN, and providing phenomenological explanation of how they lead to buckling (line defects seen later in experiments).
Calculation of dynamical effects of e-phonon coupling to explain the observed Raman spectra of graphene as a function of doping, useful in characterization of graphene-based field effect transistors.
Provided theoretical basis to substitutional, molecular and electrochemical doping in graphene identifying their spectroscopic signatures.
Explained experiments on how few-layers or bilayers of graphene (rather than graphene) are effective in storage of hydrogen as a green fuel.
