Device area invariant conductance linearity in scalable silver nanostructure based neuromorphic devices with threshold activation following nociceptive behavior
This study presents a self-assembled hierarchical silver (Ag) nanostructure system with interdigitated electrodes, addressing key challenges in neuromorphic device scalability. Unlike conventional resistive switching elements that suffer from stochastic behavior and nonlinear conductance, these devices exhibit area-invariant conductance linearity and low-voltage threshold switching (~0.4 V), ensuring reliable operation across different geometries.
Fabricated via thermal dewetting and Ag nanoparticle deposition, the system operates through an electric-field-driven nanoparticle migration mechanism, confirmed by COMSOL simulations. The electrode gap strongly influences synaptic behavior, enabling linear conductance updates, robust retention, and tunable switching dynamics. These features allow the emulation of short- and long-term plasticity, integrate-and-fire behavior, and nociceptive responses such as allodynia and hyperalgesia.
Operating efficiently at low current compliance (200 nA) and pulse energy (~100 fJ), the devices are well-suited for energy-efficient neuromorphic platforms. Their inherent volatility further makes them ideal for reservoir computing, where transient memory and nonlinear dynamics are essential.
