Prediction of 2-dimensional ferroelectricity (which is contraindicative) emerging at a metal-semiconductor phase transition in MoS2.
Demonstrating how anomalously large dielectric response of ferroelectric oxides arises from the inhomogeneously ordered states, for example, states with domain structure.
Development of a technique to derive Ginzburg-Landau theory of fluctuation-driven 1st order ferroelectric phase transition from first-principles, and pointing out corrections to the conventional Landau theory.
Determination of epitaxial strain-temperature phase diagrams of nano-thin films of ferroelectric BaTiO3 and PbTiO3, which guide experimentalists in design of devices based on ultra-thin ferroelectric films.
Prediction of lead-free ferroelectrics, BiAlO3 and BiGaO3, which was later verified experimentally in Japan.
Demonstrating how short-range chemical ordering gives rise to nano-polar regions that are responsible for diffuse phase transition and giant dielectric response of relaxor ferroelectrics.
